Wireless Processor, Wireless Memory, Information System, And Semiconductor Device

ABSTRACT

The invention provides a processor obtained by forming a high functional integrated circuit using a polycrystalline semiconductor over a substrate which is sensitive to heat, such as a plastic substrate or a plastic film substrate. Moreover, the invention provides a wireless processor, a wireless memory, and an information processing system thereof which transmit and receive power or signals wirelessly. According to the invention, an information processing system includes an element forming region including a transistor which has at least a channel forming region formed of a semiconductor film separated into islands with a thickness of 10 to 200 nm, and an antenna. The transistor is fixed on a flexible substrate. The wireless processor in which a high functional integrated circuit including the element forming region is formed and the semiconductor device transmit and receive data through the antenna.

TECHNICAL FIELD

The present invention relates to a wireless processor or a wirelessmemory formed by using a plastic material for a substrate and includingan integrated circuit formed of a thin film transistor thereover.Moreover, the invention relates to a semiconductor device provided withthe wireless processor or the wireless memory.

BACKGROUND ART

A liquid crystal display panel has been developed which has a pixelportion and a driver circuit integrated over the same glass substrate byusing thin film transistors (TFTs) formed of a crystalline semiconductorfilm with a thickness of several ten nanometers. Further, a technique tomanufacture a central processing unit (CPU) which is a central functionof a computer by using high functional polycrystalline silicon which issuperior in crystallinity has been reported as well (for example, referto Non-patent Documents 1 and 2). In the case where a pixel portion anda driver circuit are integrated over the same glass substrate, a memoryis also formed over the same substrate. With such a technical progress,a technique called System on Panel to integrate a display function and acomputer function realized by a CPU over a glass substrate is becomingto be realized.

A memory is generally formed by using a silicon wafer. However, theaforementioned system panel which is required to be thin and lightweightis expected to have a memory formed by using a plastic substrate or aplastic film substrate. This is because plastic is low in specificgravity, lightweight, and high in shock resistance as compared to asilicon wafer and glass.

However, a plastic material is generally poor in heat resistance, thusthe highest temperature of the process is required to be decreased.Accordingly, a crystalline semiconductor film to form a memory cannot beformed.

[Non-Patent Document 1]

Imaya, A., “CG Silicon technology and its application”, AM-LCD 2003Digest, p. 1, 2003.

[Non-patent Document 2]

Lee, B. Y, et al., “A CPU on a glass substrate using CG-Silicon TFTs”,ISSCC Digest, p. 164, 2003.

DISCLOSURE OF INVENTION

In view of the aforementioned, the invention provides a processor or amemory having a high functional integrated circuit formed by using apolycrystalline semiconductor over a substrate which is sensitive toheat such as a plastic substrate or a plastic film substrate. Moreover,the invention provides a wireless processor or a wireless memory whichtransmits and receives power or signals wirelessly, and a semiconductordevice incorporating the wireless processor or the wireless memory.

In view of the aforementioned, the invention provides a processor or amemory having a high functional integrated circuit fixed over a plasticsubstrate or the like which is sensitive to heat. The processor or thememory can transmit and receive signals or power by an antenna, a lightdetecting element, or a light emitting element.

According to one specific mode of the wireless processor of theinvention, an element forming region including a transistor which has atleast a channel forming region formed of at least one semiconductor filmamong semiconductor films separated into islands with a thickness of 10to 200 nm, and an antenna are provided. The transistor is fixed on aflexible substrate. Further, a high functional integrated circuit whichhas the element forming region is provided.

According to another mode of the wireless processor of the invention, anelement forming region including a transistor which has at least achannel forming region formed of at least one semiconductor film amongsemiconductor films separated into islands with a thickness of 10 to 200nm, and one of a light detecting element and a light emitting elementare provided. The transistor is fixed on a flexible substrate. Further,a high functional integrated circuit which has the element formingregion is provided.

It is to be noted that the wireless processor of the invention includesa connecting unit.

The invention provides an information processing system between awireless processor and a semiconductor device provided with the wirelessprocessor. Here, providing also means incorporating and arranging in thevicinity.

According to one specific mode of the information processing system ofthe invention, an element forming region including a transistor whichhas at least a channel forming region formed of at least onesemiconductor film among semiconductor films separated into islands witha thickness of 10 to 200 nm, and an antenna are provided. The transistoris fixed on a flexible substrate. The wireless processor in which a highfunctional integrated circuit including the element forming region isformed and the semiconductor device transmit and receive data throughthe antenna.

According to another mode of the information processing system of theinvention, an element forming region including a transistor which has atleast a channel forming region formed of at least one semiconductor filmamong semiconductor films separated into islands with a thickness of 10to 200 nm, and one of a light detecting element and a light emittingelement are provided. The transistor is fixed on a flexible substrate.The wireless processor in which a high functional integrated circuitincluding the element forming region is formed and the semiconductordevice transmit and receive data by using one of a light detectingelement and a light emitting element.

As a transistor which has at least a channel forming region formed of atleast one semiconductor film among semiconductor films separated intoislands with a thickness of 10 to 200 nm, a thin film transistor can beused, for example.

According to the invention, a semiconductor device which realizes theaforementioned information processing system can be provided.

According to one specific mode of the semiconductor device of theinvention, an arithmetic unit, a memory unit, and an interface for thewireless processor which includes a PCI interface, a control circuit,and an electric wave interface are provided.

According to another mode of the semiconductor device of the invention,an arithmetic unit, a memory unit, a hard disc, and an interface for thewireless processor which includes a PCI interface, a control circuit,and an electric wave interface are provided.

According to one specific mode of the invention, a wireless memoryincludes an RF circuit and a memory which includes a transistorincluding at least a channel forming region formed of at least onesemiconductor film among semiconductor films separated into islands witha thickness of 10 to 200 nm. The transistor is fixed on a plasticsubstrate. Further, a high functional integrated circuit which includesthe element forming region is provided.

According to the invention, an RF circuit includes an antenna.

According to another mode of the invention, a wireless memory includes amemory which includes a transistor including at least a channel formingregion formed of at least one semiconductor film among semiconductorfilms separated into islands with a thickness of 10 to 200 nm, and oneof a light detecting element and a light emitting element. Thetransistor is fixed on a plastic substrate. Further, a high functionalintegrated circuit which includes the element forming region isprovided.

According to another mode of the invention, a semiconductor deviceincorporates a wireless memory.

Specifically, a semiconductor device of the invention includes anarithmetic unit, a memory unit, and an interface for a wireless memorywhich includes a PCI interface, a control circuit, and an electric waveinterface.

According to another mode of the semiconductor device of the invention,an arithmetic unit, a memory unit, a hard disc, and an interface for awireless memory which includes a PCI interface, a control circuit, andan electric wave interface are provided.

According to another mode of the invention, an information processingsystem is provided in which a wireless memory and a semiconductor devicetransmit and receive data and power by using an antenna or one of alight detecting element and a light emitting element.

Specifically, an information processing system of the invention includesan antenna and an element forming region which includes a transistorincluding at least a channel forming region formed of at least onesemiconductor film among semiconductor films separated into islands witha thickness of 10 to 200 nm. The transistor is fixed on a flexiblesubstrate. A semiconductor device and a wireless memory in which afunctional integrated circuit including the element forming region isformed transmit and receive data through the antenna.

According to another mode of the information processing system of theinvention, the information processing system includes an element formingregion which includes a transistor including at least a channel formingregion formed of at least one semiconductor film among semiconductorfilms separated into islands with a thickness of 10 to 200 nm, and oneof a light detecting element and a light emitting element. Thetransistor is fixed on a flexible substrate. A semiconductor device anda wireless memory in which a high functional integrated circuitincluding the element forming region is formed transmit and receive databy using one of the light detecting element and the light emittingelement.

According to the invention, a processor can be connected wirelessly.That is, data and power can be transmitted and received wirelesslybetween the processor and a semiconductor device. Therefore, a processorcan be easily increased. In this manner, wireless transmission andreception of power or signals can add high value to a processor.

According to the invention, a memory can be connected wirelessly. Thatis, data and power can be transmitted and received wirelessly between amemory and a semiconductor device. Therefore, a memory can be easilyincreased. In this manner, wireless transmission and reception of poweror signals can add high value to a memory and a semiconductor device.

According to the invention, a wireless processor or a wireless memorywhich is superior in shock resistance and flexibility can be obtained byforming a high functional integrated circuit such as an arithmetic uniton a plastic substrate.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram showing a wireless processor of the invention.

FIG. 2 is a diagram showing a wireless processor and a semiconductordevice of the invention.

FIG. 3 is a view showing wireless processors of the invention mounted toa personal computer.

FIG. 4 is a diagram showing a wireless processor interface of theinvention.

FIG. 5 is a diagram showing an electronic wave interface of theinvention.

FIG. 6 is a diagram showing a wireless processor and a semiconductordevice of the invention.

FIGS. 7A and 7B are diagrams showing use modes of a wireless processoror a wireless memory of the invention.

FIG. 8 is a diagram showing a wireless processor of the invention whichis non-compatible with a main processor.

FIG. 9 is a diagram showing a wireless memory of the invention.

FIG. 10 is a diagram showing a wireless memory of the invention.

FIG. 11 is a view showing a wireless memory of the invention.

FIG. 12 is a diagram showing a wireless memory of the invention.

FIG. 13 is a diagram showing a wireless memory of the invention.

FIGS. 14A to 14E are diagrams showing a wireless processor or a wirelessmemory of the invention.

FIGS. 15A and 15B are diagrams showing a wireless processor or awireless memory of the invention.

FIGS. 16A to 16C are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIGS. 17A to 17C are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIGS. 18A and 18B are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIGS. 19A and 19B are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIGS. 20A and 20B are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIGS. 21A and 21B are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIGS. 22A and 22B are diagrams showing manufacturing steps of a wirelessprocessor or a wireless memory of the invention.

FIG. 23 is a diagram showing a wireless processor or a wireless memoryof the invention.

FIG. 24 is a diagram showing a wireless processor or a wireless memoryof the invention.

FIG. 25 is a view showing a wireless processor or a wireless memory andan antenna of the invention.

FIGS. 26A to 26D are views of semiconductor devices to each of which awireless memory of the invention is mounted.

FIGS. 27A to 27E are views of semiconductor devices to each of which awireless processor of the invention is mounted.

BEST MODE FOR CARRYING OUT THE INVENTION

Although the invention will be fully described by way of embodimentmodes and embodiments with reference to the accompanying drawings, it isto be understood that various changes and modifications will be apparentto those skilled in the art. Therefore, unless otherwise such changesand modifications depart from the scope of the invention, they should beconstrued as being included therein. It is to be noted that identicalportions in embodiment modes and embodiments are denoted by the samereference numerals and detailed descriptions thereof are omitted.

Embodiment Mode 1

In this embodiment mode, a configuration of a wireless processor of theinvention is described.

FIG. 1 shows a typical circuit configuration of a wireless processor. InFIG. 1, a wireless processor 5000 includes an RF circuit 5001, a powersource circuit 5002, a clock generating circuit 5003, a datademodulation circuit 5004, a load modulation circuit 5005, a CPUinterface 5006, an arithmetic processing unit (hereinafter referred toas a CPU as a function as a so-called CPU is included) 5007, and amemory 5008.

The wireless processor 5000 can receive a power supply throughelectromagnetic waves and can also transmit and receive data through anantenna included in the RF circuit. The power may be supplied from anincorporated battery instead of being supplied through the antenna, orboth of these may be used in combination. Furthermore, one of a lightdetecting element and a light emitting element may be incorporated as adata transmission/reception unit so that infrared data communicationthereby can be performed.

When electromagnetic waves are supplied to the RF circuit 5001, power isgenerated in the power source circuit 5002, a clock signal is generatedin the clock generating circuit 5003, and data is demodulated in thedata demodulation circuit 5004 respectively. Moreover, a load modulationin accordance with transmitted data is performed in the load modulationcircuit 5005. The CPU interface 5008 controls data communication betweenan external system and a CPU.

As a work region of the CPU 5007, the memory 5008 may be provided with avolatile SRAM or DRAM, or a nonvolatile memory which can hold data evenwhen the power is not supplied. As a typical nonvolatile memory, a flashmemory and an EEPROM can be used. As a memory element, a floating gatetransistor, a quantum dot transistor, a ferroelectric memory element andthe like can be used. It is to be noted that a memory is not necessarilyprovided in the wireless processor when an external memory is employed.

It is to be noted that a wireless processor can be formed on a plasticsubstrate or a plastic film substrate (these may be collectivelyreferred to as a flexible substrate). Specifically, the RF circuit 5001,the power source circuit 5002, the clock generating circuit 5003, thedata demodulation circuit 5004, the load modulation circuit 5005, theCPU interface 5006, the CPU 5007, and the memory 5008 (these correspondto a high functional integrated circuit) can be formed so as to have anelement forming region which includes a transistor including at least achannel forming region formed of at least one semiconductor film amongsemiconductor films separated into islands with a thickness of 10 to 200nm formed over a flexible substrate 110. As a specific transistor, athin film transistor (TFT) can be used. The antenna included in the RFcircuit may be fixed on a flexible substrate such as a plastic substrateor may be formed separately from the substrate and connected thereto. Adetailed manufacturing method will be described in Embodiment Mode 12 or13. As a result, a wireless processor which is superior in shockresistance and flexibility can be obtained.

Next, FIG. 2 shows a configuration example of a system in which thewireless processor of the invention is included. FIG. 2 shows a systemincluding a semiconductor device 5100 and a wireless processor 5109. Thesemiconductor device 5100 is provided with a wireless processorinterface 5108 in addition to a typical configuration such as a personalcomputer. In FIG. 2, the semiconductor device 5100 includes a centralprocessing unit (CPU) 5101, a memory unit 5102, a graphics 5103connected to a PCI bus, a display 5104 connected to the graphics 5103, abus interface (for example, a south bridge and the like) 5105, a harddisc 5106 connected to the interface 5105, a keyboard 5107, a wirelessprocessor interface 5108 and the like. As the memory unit 5102, forexample, a DRAM, an SRAM, a DRAM, or a nonvolatile memory can be used.The wireless processor interface 5108 transmits and receives data withthe wireless processor 5109 through the antenna. When the wirelessprocessor 5109 includes one of a light detecting element and a lightemitting element while the semiconductor device includes the other, datatransmission/reception through infrared communication can be realized.

FIG. 2 shows a mode where the wireless processor interface 5108 isconnected to a PCI bus; however, the wireless processor interface 5108may be connected to a south bridge or other buses.

The description has been made on the case where the semiconductor device5100 is typically a personal computer; however, various semiconductordevices incorporating a CPU and an ASIC, such as a PDA, a game machine,and a DVD are applicable as well.

It is one of the features of the invention that a processor can beconnected wirelessly. That is, data and power can be transmitted andreceived wirelessly between the processor and a semiconductor device.Therefore, the processor can be easily increased. For example, providedthat a communicable distance of the wire processor interface is 1 mm to50 cm, the wireless processor interface can recognize the wirelessprocessor no matter where it is attached to the body of the personalcomputer. It is preferable that the wireless processor interface bedesigned to realize the aforementioned feature. It is convenient thatthe wireless processor be attached on a body with an attaching agentsuch as a magnet and a seal. That is, it is a feature of the wirelessprocessor of the invention to have an attaching agent for fixing to anobject is provided.

As a result, by only attaching wireless processors 5404 to a main body5401 of a personal computer which is one mode of a semiconductor deviceas shown in FIG. 3, a function of the processor can be incorporated inthe system. Wireless transmission and reception of power and signals canadd high value to the processor and the semiconductor device. Thepersonal computer includes a display 5402 and a keyboard 5403.

By increasing the processor in this manner, parallel computation byusing a plurality of processors can be realized, which can reduce a loadimposed on the CPU. It is to be noted that the wireless processor ispreferably used for an application where data communication with systemis rather less frequent since data is transferred serially through theantenna.

In this manner, wireless transmission and reception of power or signalscan eliminate a connection defect of a connector and the like. Moreover,a defect which occurs in handling the device caused by a wiring whichconnects each device and the like can be eliminated. In the case wherethe power is received only through the antenna, a battery and the likeare not required to be incorporated, which leads to a further reductionin weight.

Embodiment Mode 2

In this embodiment mode, an example of a circuit configuration of awireless processor interface 5200 is described with reference to FIG. 4.

The wireless processor interface 5200 shown in FIG. 4 is connected to aPCI bus and includes a PCI interface 5201, a control circuit 5202, andan electric wave interface 5203. The electric wave interface 5203depends on a communication method such as an electromagnetic inductionmethod and a microwave method.

The electric wave interface 5203 includes, for example, a datatransmission path 5708, a data reception path 5709, an oscillationcircuit 5701, and an antenna 5704. When transmission data is inputted tothe data transmission path 5708 in such an electric wave interface 5203,a signal from the oscillation circuit 5701 is modulated in a modulationcircuit 5702, amplified in an amplifier circuit 5703, and transmitted tothe antenna 5704. On the other hand, when a reception signal from theantenna 5704 is inputted to the data reception path 5709, only aresponse signal from a wireless processor is received by a band pathfilter 5707. The received signal is amplified in an amplifier circuit5706, demodulated in a demodulation circuit 5705, and transmitted to thecontrol circuit 5202. Examples of a control signal are an enable signal,a frequency control signal, a stand-by signal and the like.

The control circuit 5202 shown in FIG. 4 is in charge of communicationwith application software which controls a wireless processor from amain body of system, execution of instructions, communication with awireless processor, and coding and decoding of signals. Further, thecontrol circuit 5202 processes encryption and decryption, recognition,and collision as required. In order to make sure that communication ismade with the same wireless processor, it is preferable that an IDnumber given to a wireless processor be regularly read and recognized.

The PCI interface 5201 is an interface used for communicating databetween the control circuit 5202 and a main body of system through a PCIbus. In this embodiment mode, the PCI interface 5201 is connected to aPCI bus, however, a wireless memory can be incorporated in the main bodyof system with other bus by changing the PCI bus interface portion to abus interface suitable for a bus to be connected.

Embodiment Mode 3

According to the wireless processor of the invention, a plurality ofwireless processors can be connected by one wireless processorinterface. In this embodiment mode, an example of such a mode isdescribed with reference to FIG. 6.

FIG. 6 shows a system including a plurality of wireless processors 5303to 5305 and a semiconductor device 5301 which includes a wirelessprocessor interface 5302.

Description is made on a configuration in which the wireless processorinterface 5302 recognizes and controls the plurality of wirelessprocessors. First, the case where each of the wireless processors has aunique ID number is described, and then the case where the wirelessprocessors are each identical and do not have unique ID numbers isdescribed. In either case, each of the wireless processors has an IDnumber which is recognizable in the system when the wireless processoris incorporated in the system. Reading the ID number, the system canselectively communicate with the wireless processor having the IDnumber. Such a selective communication can be realized in the case wherethe wireless processor accepts such a command that the wirelessprocessor communicates data only when the ID number is matched.

In order to recognize a plurality of wireless processors, ID numberswhich are recognizable in the system are required to be obtained asdescribed above. For example, ID numbers of all wireless processorswithin a communicable region can be obtained by a method as shown in aflow chart of FIG. 7A. First, a system regularly reads an ID number of awireless processor within a communicable region. That is, the system hasa unit for interrogating all the wireless processors within thecommunicable region. In the case where there are no wireless processorsin the communicable region, no response is made, thus the systemprocesses no data. In such a case, an ID may be interrogated again. Inthe case where one or more wireless processors are in the communicableregion, the system may be able to read an ID number normally (readingsuccess) or may fail to read an ID number due to a collision(collision). In the case where the ID number can be read normally, theID number can be successfully obtained. When the read ID number is notregistered in the system, it is newly registered therein. On the otherhand, in the case where data fails to be read due to a collision, an IDmay be read again.

According to the aforementioned method, in the case where a timing atwhich an ID number is transmitted from each wireless processor is commonamong a plurality of wireless processors, it is hard to avoid acollision of a plurality of wireless processors, thus it becomesdifficult to obtain an ID number. In order that this method functionsefficiently, a timing at which an ID number is transmitted is madedifferent for each wireless processor. Alternatively, a timing at whichan ID number is transmitted is changed every time reading is performed.In specific, a transmission timing is determined based on the ID numberor based on a random number generated every time an ID number is read.According to this method, the wireless processor interface may employ amethod to use data with no collision among a plurality of received dataat reception timings divided into a plurality of divisions.

As shown in a flow chart of FIG. 7B, an ID number of a wirelessprocessor within a communicable region can be obtained. FIG. 7B has afeature in a unit for interrogating only a part of wireless processorsin addition to a unit for interrogating all the wireless processors asshown in FIG. 7A. For example, it is assumed that an ID number can bemasked by bit and a wireless processor accepts a command that a responseis made when an unmasked bit matches. Then, by reducing the wirelessprocessors to be interrogated, the ID number can be obtained.

In specific, the system reads an ID number from a wireless processorhaving an arbitrary ID number. That is, all bits of the ID number aremasked and read. When there is no collision, a similar process to FIG.7A is performed. When there is a collision, the ID numbers are dividedand one group is chosen (limitation of a chip) and read again. In thecase where there is no response, another group of the divided groups ischosen (shift of a chip) and read again, and then all the Ids are swept.When reading is succeeded, the obtained ID number is registered in thesystem when it is a new number, and a chip is shifted when it is alreadyregistered. Moreover, when there is a collision, the ID number isfurther divided and limited, thus reading is performed again.

For example, provided that a collision occurs with all the IDs eachhaving an ID number of 16 bits, 15 bits are masked (or one bit of the IDnumber is specified) and the left one bit is read twice. In the casewhere there is a collision, the number of bits to be masked is reducedby one bit, and reading is repeatedly performed.

Alternatively, in the case where a collided bit can be determined, avalue thereof is limited to 0 or 1, thereby reading is performed again.

In this manner, by specifying by one bit to search all the IDs, an IDnumber can be obtained rapidly.

Heretofore described is the case where a wireless processor includes anID number as nonvolatile data, however, a plurality of chips can becontrolled relatively to a wireless processor without a unique IDnumber. For example, a wireless processor may have an ID number storedin a volatile memory so that the ID number is randomly set when enteringa communicable region. By using an ID number of as many as 32 bits, aprobability that ID numbers match between different chips issubstantially 0%. This ID number does not change within the communicableregion; therefore, it can be used as an ID number in the system.

A mode to drive a plurality of wireless processors by one wirelessprocessor interface is preferable in downsizing of a semiconductordevice. In particular, such a structure is preferable in the case wherethe performance of wireless processor is impeded by the performance ofan internal CPU. On the other hand, in the case where the performance ofthe wireless processor is impeded by data transfer speed, it ispreferable to provide a plurality of wireless processor interfaces inorder to improve the performance.

A plurality of wireless processors can be typically controlled by a timedivision method. Alternatively, a method for dividing the frequency anda method for spatially dividing can be employed as well.

Embodiment Mode 4

It is one of the features of this system that a processor can beconnected wirelessly, which allows processors to be easily increased inthe system. By increasing processors in this manner, a parallelcomputation using the plurality of processors can be realized. In thisembodiment mode, an example of parallel computation is described with aprocessor incorporated in the main body as a master and the plurality ofwireless processors as slaves.

Not only in a wireless processor, a parallel computation is oftenimpeded in performance due to a data transfer speed. Therefore, aprogram with less data transfer between processors is suitable for aparallel computation. An example of such a program is a Monte Carlomethod which is a means of statistical evaluation by using randomnumbers.

The Monte Carlo method is a method of evaluating a true value byrepeating a statistical process using random numbers. For example, aprobability is obtained that a coordinate (x, y) determined by a pair ofuniform random numbers each of which is 0 to 1 is included in a figureincluded in a square of 1 on a side, thereby an area S of the figure isevaluated. When the coordinate is included in the figure, a value of 1is obtained, while otherwise a value of 0 is obtained. Provided that thecoordinate is included k times in n times, the area of the figure isevaluated to be approximately k/n. An error of the evaluation is smalleras n becomes larger, and decreases by 1/(vn).

For example, by copying a program for determining if (x, y) is includedin the figure, which corresponds to a statistic process, into aninternal memory of each of a plurality of wireless processors as slaves,the Monte Carlo calculation can be performed independently by simplyobtaining random numbers externally. In the case where the coordinate isincluded in the figure k times in n times of random numbers obtainedfrom outside, the plurality of wireless processors transmit values of nand k to outside. Then, based on the results (N times) of all thewireless processors, the area of the figure can be finally obtained withan error of approximately 1/(vN).

In such a program, data transfer between the processors is little, thusa parallel computation can be executed efficiently. It is to be notedthat the master controls the plurality of slaves; however, the mastermay also perform the Monte Carlo calculation similarly to the slaves inthe meantime.

Embodiment Mode 5

It is one of the features of this system that a processor can beconnected wirelessly, which allows processors to be increased easily inthe system. In this embodiment mode, an example of providing anon-compatible CPU as a wireless processor is described as anapplication example of such a system.

There are various kinds of CPUs such as Pentium (registered trademark),however, each of them has a different instruction set, and thus aprogram as high in level as a machine language cannot be shared amongthem. On the other hand, there are many cases where it is desirable thatboth application software of different CPUs can be used. In view of sucha problem, a processor non-compatible with a main processor isadditionally provided as a wireless processor of the invention, so thatsoftware for the added processor can be executed.

FIG. 8 shows a mode, although in actuality, a process in a wirelessprocessor interface is required more or less because applicationsoftware is normally executed by the operation system (OS) and datastructures are different.

In FIG. 8, a CPU 5501 of a main body and a CPU 5510 in a wirelessprocessor interface 5509 are not compatible with each other and a harddisc 5506 stores software and data for both the CPU 5501 and the CPU5510. A system is constructed in an operation system which operates inthe CPU 5501. The wireless processor 5509 is recognized by the operationsystem, and then embedded into or separated from the system. That is,the CPU 5510 is controlled by the operation system.

In the case where software which operates in the CPU 5510 is executed insuch a structure, the operation system invokes the CPU 5510 to executethe software. The CPU 5510 transfers a program and data to a memory 5511in the wireless processor, thereby the program is executed. The wirelessprocessor interface 5508 controls so that the CPU 5510 can executes theprogram and transfer data with the operating system smoothly.

In this manner, by increasing a processor non-compatible with aprocessor of the main body, such a system can be constructed thatsoftware for the increased wireless processor can be executed inaddition to normal software.

Embodiment Mode 6

In this embodiment mode, an example where specific application softwareis installed is described as an application example of a wirelessprocessor.

For example, in the case of portably using a wireless processor which isinstalled with certain application software, the application softwarecan be used only by mounting (attaching etc.) the wireless processor toa semiconductor device which includes a corresponding wireless processorinterface.

A license mode that can prevent illegal copies can be realized by givinga license as hardware so that software stored therein cannot be read.Conventionally, when releasing software using a CD-ROM, the softwarecould be illegally installed in a plurality of hardware. In order toprevent such a problem, a trouble has to be taken in registering aserial number of the hardware.

By giving a license by a wireless processor of the invention ashardware, a license mode can be realized that an illegal installationcan be prevented and no such procedure as to register a serial number isrequired.

A mode where specific application software is installed is described asan application example of a wireless processor. For example, in the caseof portably using a wireless processor which is installed with certainapplication software, the application software can be used only bymounting (attaching etc.) the wireless processor to an electronic devicewhich includes a corresponding wireless processor interface.

A license mode that can prevent illegal copies can be realized by givinga license to each wireless processor which is installed with specificapplication software so that the installed software cannot be read.

Conventionally, when releasing application software, a CD-ROM or anetwork has been normally used. However, a method to give a license onlyto software is not preferable since the software can easily be copiedillegally. In order to prevent such a problem, a trouble has to be takenin registering a serial number of the hardware.

As described above, by giving a license to each wireless processor whichis installed with specific application software, the wireless processoris not required to load the stored software to outside for execution,which makes it substantially impossible to copy the software illegally.Therefore, it is unlikely that more than wireless processors givenlicenses are produced illegally. Further, by attaching the wirelessprocessor to be mounted on the system, the wireless processor can beused. Thus, such a mode is realized where only one license is requiredin the case of using a plurality of personal computers and serialnumbers are not required to be registered for all the personal computersto be used.

Embodiment Mode 7

In this embodiment mode, a mode of a wireless memory is described.

FIG. 9 shows a typical circuit configuration of a wireless memory 3000.In FIG. 9, the wireless memory 3000 includes an RF circuit 3003, a powersource circuit 3004, a clock generating circuit 3005, a datademodulation circuit 3006, a load modulation circuit 3007, a memoryinterface 3008, and memories 3009 and 3010. For the memories 3009 and3010, a nonvolatile memory and a volatile memory can be usedrespectively.

The wireless memory 3000 can be supplied with a power and transmit andreceive data through electromagnetic waves through an antenna includedin the RF circuit. Furthermore, one of a light detecting element and alight emitting element may be incorporated as a datatransmission/reception unit so that infrared data communication therebycan be performed.

When electromagnetic waves are supplied to the RF circuit 3003, power isgenerated in the power source circuit 3004, a clock signal is generatedin the clock generating circuit 3005, and data is demodulated in thedata demodulation circuit 3006 respectively. Moreover, a load modulationin accordance with transmitted data is performed in the load modulationcircuit 3007. The memory interface 3008 controls data communicationbetween an external device, the nonvolatile memory 3009, and thevolatile memory 3010, and reads and writes data in accordance with thereceived instruction, address, and data.

It is preferable that the invention incorporate a nonvolatile memory inorder to hold data even when a power is not supplied. In the case wherea battery is incorporated, a volatile memory only may be providedwithout providing a nonvolatile memory. The nonvolatile memory 3009 istypically a flash memory and an EEPROM. For a memory element, a floatinggate transistor, a silicon dot structure transistor, a ferroelectricmemory element and the like can be used. As a temporary memory such as awork memory, a volatile memory such as an SRAM and a DRAM may beprovided as well.

It is to be noted that a wireless memory can be formed on a plasticsubstrate or a plastic film substrate (these may be collectivelyreferred to as a flexible substrate). Specifically, the RF circuit 3003,the power source circuit 3004, the clock generating circuit 3005, thedata demodulation circuit 3006, the load modulation circuit 3007, thememory interface 3008, and the memories 3009 and 3010 (these correspondto a high functional integrated circuit) can be formed so as to have anelement forming region which includes a transistor including at least achannel forming region formed of at least one semiconductor film amongsemiconductor films separated into islands with a thickness of 10 to 200nm formed over an insulating surface. As a specific transistor, a thinfilm transistor (TFT) can be used. The antenna included in the RFcircuit may be fixed on a flexible substrate such as a plastic substrateor may be formed separately from the substrate and connected thereto. Adetailed manufacturing method will be described in Embodiment Mode 12 or13. As a result, a wireless processor which is superior in shockresistance and flexibility can be obtained.

Next, FIG. 10 shows a configuration example of a semiconductor device,in which a wireless memory can be incorporated in a system. Asemiconductor device 3200 shown in FIG. 10 is typically a personalcomputer. The semiconductor device 3200 includes an arithmetic unit(hereinafter referred to as a CPU as a function as a so-called CPU isincluded) incorporating a PCI interface 3202 and a DRAM interface 3203,a DRAM 3204, a graphics 3206 connected to a PCI bus, a display connectedto the graphics 3206, a south bridge 3205, a ROM 3209 and a keyboard3210 connected to the south bridge 3205, a wireless memory driver 3207(hereinafter also simply referred to as a driver) and the like. Thewireless memory driver 3207 drives a wireless memory 3211 wirelessly.

It is to be noted that a mode where the wireless memory driver 3207 isconnected to a PCI bus is shown in FIG. 10; however, the wireless memorydriver 3207 may be connected to a CPU or a south bridge.

The semiconductor device 3200 may be various semiconductor devicesincorporating a CPU and an ASIC, such as a PDA, a game machine, and aDVD as well as a personal computer.

It is one of the features of the invention that a power is supplied anddata is transferred wirelessly. Accordingly, a conventional card typesemiconductor memory which is inserted and pulled out is not required,but a memory can be mounted by only placing, for example, attaching awireless memory at a communicable place with a driver. Further,reliability is improved by being wireless. Moreover, a defectiveconnection of a connector and the like can be eliminated and a defectwhich occurs in handling the device caused by a wiring which connectseach device can be eliminated.

It is preferable that a personal computer be designed to have a drivercommunicable in the range of 1 mm to 50 cm so that the driver canrecognize a wireless memory no matter where it is attached on the bodyof the personal computer. It is a convenient mode of a wireless memoryto be attached to a main body with a magnet and the like. As a result, amemory can be incorporated, for example, by only attaching wirelessmemories 3404 to a main body 3401 of a personal computer. In thismanner, wireless transmission and reception of power or signals can addhigh value to a memory and a semiconductor device. FIG. 11 is aschematic diagram of a personal computer including the main body 3401, adisplay 3402, a keyboard 3403, and wireless memories 3404.

Embodiment Mode 8

In this embodiment mode, a circuit configuration of a driver of awireless memory is described. A wireless memory driver 3301 shown inFIG. 12 has a structure connected to a PCI bus, including a PCIinterface 3302, a control circuit 3303, and an electric wave interface3304.

The electric wave interface 3304 which depends on a communication methodgenerally has the same configuration as the electric wave interface 5203shown in FIG. 5. It is to be noted that a communication methodapplicable to the invention is an electromagnetic induction method, amicrowave method, and the like. The electric wave interface 5203 shownin FIG. 5 includes the data transmission path 5708, the data receptionpath 5709, the oscillation circuit 5701, and the antenna 5704. Whentransmission data is inputted to the data transmission path 5708, asignal from the oscillation circuit 5701 is modulated in the modulationcircuit 5702, amplified in the amplifier circuit 5703, and transmittedto the antenna 5704. On the other hand, when a reception signal from theantenna 5704 is inputted to the data reception path 5709, only aresponse signal from a wireless memory is received by the band pathfilter 5707. The received signal is amplified in the amplifier circuit5706, demodulated in the demodulation circuit 5705, and transmitted tothe control circuit 5202. Examples of a control signal are an enablesignal, a frequency control signal, a stand-by signal and the like.

The control circuit 3303 is in charge of communication with applicationsoftware which controls a wireless memory from a main body of system,execution of instructions, communication with a wireless memory, andcoding and decoding of signals. Further, the control circuit 3303processes encryption and decryption, recognition, and collision asrequired. In order to make sure that communication is made with the samewireless memory, it is preferable that an ID number given to a wirelessmemory be regularly read and recognized, and then check sum (forexample, parity check) be performed relatively to communication datatherebetween.

The PCI interface 3302 is an interface used for communicating databetween the control circuit 3303 and a main body of system through a PCIbus. In this embodiment mode, the PCI interface 3302 is connected to aPCI bus; however, a wireless memory can be incorporated in the main bodyof system with other bus by changing the PCI bus interface portion to abus interface suitable for a bus to be connected.

Embodiment Mode 9

According to the invention, a wireless memory is not required to beinserted and pulled out and a plurality of wireless memories can bedriven by one driver, which is described in this embodiment mode withreference to FIG. 13.

FIG. 13 shows a system including a semiconductor device 3101 which has awireless memory driver 3102 and a plurality of wireless memories 3103 to3105.

Description is made on a configuration where the wireless memory driver3102 recognizes and controls a plurality of wireless memories. First,the case where each of the wireless memories has a unique ID number isdescribed, and then the case where the wireless memories are identicaland do not have unique ID numbers is described. In either case, each ofthe wireless memories has an ID number which is recognizable in thesystem when the wireless memory is incorporated in the system. Readingthe ID number, the system can selectively communicate with the wirelessmemory having the ID number. Such a selective communication can berealized in the case where the wireless memory accepts such a commandthat the wireless processor communicates data only when the ID number ismatched.

In order to recognize a plurality of wireless memories, ID numbers whichare recognizable in the system are required to be obtained as describedabove. For example, an ID number of a wireless memory within acommunicable region can be obtained by a method as shown in a flow chartof FIG. 7A. First, a system regularly reads ID numbers of all wirelessmemories within a communicable region. In the case where there are nowireless memories in the communicable region, no response is made, thusthe system processes no data. In the case where one or more wirelessmemories are in the communicable region, the system may be able to readan ID number normally or may fail to read an ID number due to acollision. In the case where the ID number can be read normally, the IDnumber can be successfully obtained. When the read ID number is notregistered in the system, it is newly registered therein. On the otherhand, in the case where data fails to be read due to a collision, an IDmay be read again.

According to the aforementioned method, in the case where a timing atwhich an ID number is transmitted from each wireless memory is commonamong a plurality of wireless memories, it is hard to avoid a collisionof a plurality of wireless memories, thus it becomes difficult to obtainan ID number. In order that this method functions efficiently, a timingat which an ID number is transmitted is made different for each wirelessprocessor. Alternatively, a timing at which an ID number is transmittedis changed every time reading is performed. In specific, a transmissiontiming is determined based on the ID number or based on a random numbergenerated every time an ID number is read. According to this method, thedriver may employ a method to use data with no collision among aplurality of pieces of received data at reception timings divided into aplurality of numbers.

As shown in a flow chart of FIG. 7B, an ID number of a wireless memorywithin a communicable region can be obtained. FIG. 7B has a feature in aunit for interrogating only a part of wireless memories in addition to aunit for interrogating all the wireless memories as shown in FIG. 7A.For example, it is assumed that an ID number can be masked by bit and awireless memory accepts a command that a response is made when anunmasked bit matches. Then, by reducing the wireless memories to beinterrogated, the ID number can be obtained.

In specific, the system reads an ID number from a wireless memory havingan arbitrary ID number. That is, all bits of the ID number are maskedand read. When there is no collision, a similar process to FIG. 7A isperformed. When there is a collision, the ID numbers are divided and onegroup is chosen (limitation of a chip) and read again. In the case wherethere is no response, another group of divided groups is chosen (shiftof a chip) and read again, and then all the IDs are swept. When readingis succeeded, the obtained ID number is registered in the system when itis a new number, and a chip is shifted when it is already beenregistered. Moreover, when there is a collision, the ID number isfurther divided and limited, thus reading is performed again.

For example, provided that a collision occurs with all the IDs eachhaving an ID number of 16 bits, 15 bits are masked (or one bit of the IDnumber is specified) and the left one bit is read twice. In the casewhere there is a collision, the number of bits to be masked is reducedby one bit, and reading is repeatedly performed.

Alternatively, in the case where a collided bit can be determined, avalue thereof is limited to 0 or 1, thereby reading is performed again.

In this manner, by specifying by one bit to search all the IDs, an IDnumber can be obtained rapidly.

Heretofore described is the case where a wireless memory includes an IDnumber as nonvolatile data; however, a plurality of chips can becontrolled relatively to a wireless memory without a unique ID number.For example, a wireless memory may have an ID number stored in avolatile memory so that the ID number is randomly set when entering acommunicable region. By using an ID number of as many as 32 bits, aprobability that ID numbers match between different chips issubstantially 0%. This ID number does not change within the communicableregion; therefore, it can be used as an ID number in the system.

Many systems including a personal computer transfer data by using a bus;therefore, they hardly access a plurality of memories at the same time.In such systems, a mode to incorporate one driver to drive a pluralityof wireless memories is suitable and superior in downsizing of asemiconductor device. It is needless to say that a plurality of driversmay be provided as well.

Embodiment Mode 10

In this embodiment mode, description is made on a comparison of awireless memory with a wireless tag of the invention.

A wireless memory of the invention communicates through an antenna andincludes a memory, thus has a rather close structure to a wireless tag.A wireless tag, however, necessarily has a different ID fordistinguishing an object to which the tag is attached. As for a wirelessmemory of the invention, on the other hand, not all memories are notnecessarily given different IDs. For example, such a method may beemployed that a driver writes an ID number to a volatile memoryincorporated in a wireless memory once the wireless memory enters acommunicable region of the driver.

A wireless memory is different than a wireless tag in specifications andapplications such as specifications of communication, required memorycapacitance, continuous operation time and the like. A wireless memoryis advantageous in that a design freedom is high as it is only requiredto match the specifications of driver. Further, the wireless memory isadvantageous in that it has large memory capacitance and cancontinuously operate for a long time as it is used while beingconnected.

Embodiment Mode 11

In this embodiment mode, a mode that specific software is installed in awireless memory is described.

For example, by portably using a wireless memory installed with certainapplication software, the application software can be used only bymounting (attaching, etc.) the wireless memory to a semiconductor deviceto which a driver of the wireless memory corresponds. This is similar tothe usage of CD-ROMs; however, a wireless memory is superior than aCD-ROM in that reliability is high because it is used wirelessly and itcan easily be mounted.

Embodiment Mode 12

In this embodiment mode, a step of manufacturing a high functionalintegrated circuit by an SPOP method using a thin film transistor as atransistor is described.

First, a metal film 11 is formed over a first substrate 210 which has aninsulating surface as shown in FIG. 14A. It is to be noted that thefirst substrate which is only required to have resistance high enough toresist a peeling step later can be formed of a glass substrate, a quartzsubstrate, a ceramics substrate, a silicon substrate, a metal substrate,or a stainless substrate. The metal film can be formed of a single layerformed of an element selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn,Ru, Rh, Pd, Os, and Ir, an alloy material or a compound material havingthe aforementioned element as a main component, or stacked layers ofthese. The metal film can be manufactured by a sputtering method using ametal target. It is to be noted that the metal film may formed with athickness of 10 to 200 nm, or preferably 50 to 75 nm.

A nitride film of the aforementioned metal (for example, tungstennitride and molybdenum nitride) may be used instead of the metal film.An alloy film (for example, an alloy of W and Mo: W_(x)Mo_(1-x)) of theaforementioned metal may be used instead of the metal film. In thiscase, the film may be formed by sputtering using a plurality of targetssuch as a first metal (W) and a second metal (Mo) or an alloy target ofthe first metal (W) and the second metal (Mo). Furthermore, nitrogen oroxygen may be added to the metal film as well. As an adding method,nitrogen or oxygen may be ion implanted to the metal film.Alternatively, it may be added by a sputtering method in a chamber ofnitrogen or oxygen atmosphere, or a nitride metal may be used as atarget.

In this manner, by appropriately setting the forming method of the metalfilm, a peeling step can be controlled, which leads to increase theprocess margin. In specific, a heating temperature and necessity of heattreatment can be controlled.

After that, a peeled layer 12 including an element forming region isformed over a metal film 11. This peeled layer 12 is formed by stackingan oxide film containing silicon to be in contact with the metal film.The peeled layer may include an antenna as well. It is preferable thatthe peeled layer 12 be provided with an insulating film containingnitrogen, such as a silicon nitride (SiN) film, and a silicon nitrideoxide (SiON or SiNO) film in a region in contact with the metal film inorder to prevent impurities and dusts entering from the metal film andthe substrate. The insulating film functions as a base film of a thinfilm transistor.

The oxide film containing silicon may be formed of silicon oxide,silicon oxynitride and the like by a sputtering method and a CVD method.It is to be noted that the oxide film containing silicon is preferablytwice as thick or thicker than the metal film. In this embodiment mode,the silicon oxide film is formed with a thickness of 150 to 200 nm by asputtering method using a silicon target.

When forming the oxide film containing silicon, over the metal film isformed an oxide (metal oxide) 13 containing the metal. The metal oxidemay be a thin metal oxide formed over the surface of the metal film bytreatment with a solution containing sulfuric acid, hydrochloric acid,or nitric acid, a solution obtained by mixing sulfuric acid,hydrochloric acid, or nitric acid with a hydrogen peroxide solution, orozone water. As other methods, oxidation may be carried out by plasmatreatment in an oxygen atmosphere, or with ozone generated byultraviolet ray irradiation in an atmosphere containing oxygen. Further,the oxide film may be formed by heating with a clean oven at around 200to 350° C.

The metal oxide film may be formed with a thickness of 0.1 nm to 1 μm,preferably 0.1 to 100 nm, and more preferably 0.1 to 5 nm.

It is to be noted that an oxide film containing silicon, a base film andthe like are collectively referred to as an insulating film. That is,the metal film, the metal oxide film, the insulating film, and thesemiconductor film are stacked. The metal film and the metal oxide filmcan be referred to as a peeling layer.

Through predetermined manufacturing steps, a thin film transistor (TFT)having at least a channel forming region is formed of a semiconductorfilm separated into islands with a thickness of 10 to 200 nm is peeledover a semiconductor film. This semiconductor element forms the RFcircuit 5001, the power source circuit 5002, the clock generatingcircuit 5003, the data demodulation circuit 5004, the load modulationcircuit 5005, the CPU interface 5006, the CPU 5007, and the memory 5008shown in FIG. 1. Further, the RF circuit 3003, the power source circuit3004, the clock generating circuit 3005, the data demodulation circuit3006, the load modulation circuit 3007, the memory interface 3008, thenonvolatile memory 3009, and the volatile memory 3010 shown in FIG. 9can be formed. As a protective film for protecting the semiconductorelement, an insulating film containing carbon such as a DLC film or acarbon nitride (CN) film, or an insulating film containing nitrogen suchas a silicon nitride (SiN) film or a silicon nitride oxide (SiNO orSiON) film is preferably formed.

After forming the peeled layer 12 as described above, the metal oxide iscrystallized by appropriate heat treatment after forming the metaloxide, in specific. For example, in the case of using W (tungsten) forthe metal film, the metal oxide of WO_(x) (x=2 to 3) is crystallized byheat treatment at 400° C. or higher. The temperature and necessity ofsuch heat treatment may be determined according to a selected metalfilm. That is, the metal oxide may be crystallized for ease in peelingas required.

By heating after forming a semiconductor film included in the peeledlayer 12, hydrogen in the semiconductor film can be diffused. Due tothis hydrogen, a valency of the metal oxide may change.

Further, the heat treatment may be reduced in the number of steps byutilizing the manufacturing step of semiconductor elements. For example,heat treatment can be performed by using a heating furnace and laserirradiation in the case of forming a crystalline semiconductor film.

Subsequently, the peeled layer 12 is attached to a support substrate 14with a first adhesive 15 as shown in FIG. 14B. It is to be noted thatthe support substrate 14 is preferably a substrate which is higher inresistance than the first substrate 210. As the first adhesive 15, anadhesive which can be peeled, such as an ultraviolet peeling typeadhesive which is peeled by an ultraviolet ray, a heat peeling typeadhesive which is peeled by heat, an aqueous adhesive which is peeled bywater, or a double-faced tape may be used.

The first substrate 210 provided with the metal film 11 is peeledphysically (FIG. 14C). Although not shown in the schematic diagrams ofFIGS. 14A to 14E, the first substrate 210 is peeled within the layer ofthe metal oxide or a boundaries (interfaces) of opposite surfaces of themetal oxide. The boundaries of the opposite surfaces of the metal oxideare an interface between the metal oxide and the metal film or aninterface between the metal oxide and the peeled layer. The firstsubstrate 210 is peeled at any of the aforementioned interfaces. In thismanner, the peeled layer 12 can be peeled off the first substrate 210.

For the ease in peeling at this time, a portion of a substrate may becut so as to scratch the peeling interface at the cut surface by acutter or the like, that is around the interface between the metal filmand the metal oxide.

Next, as shown in FIG. 14D, the peeled layer 12 which is peeled isattached with a second adhesive 16 to a second substrate (for example, aflexible substrate such as a plastic substrate) 110 to be transferredand fixed thereto. In the case where an antenna is formed in the peeledlayer 12, the element forming region and the antenna are fixed on thesecond substrate at the same time. As the second adhesive 16, anultraviolet ray curable resin, in specific an adhesive such as an epoxyresin based adhesive and a resin additive, or a double-faced tape andthe like are to be used. In the case where the second substrate itselfis adhesive, the second adhesive is not required.

As the second substrate, a plastic material and the like such aspolyethylene terephthalate, polycarbonate, polyarylate, and polyethersulfone can be used. Such second substrate is referred to as a plasticsubstrate. Such plastic substrate has flexibility and is light inweight. By applying coating treatment to the plastic substrate,depressions and projections over the surface may be reduced or hardness,resistance, and stability may be enhanced.

Subsequently, the first adhesive 15 is removed and the support substrate14 is peeled off (FIG. 14E). In specific, the substrate may beirradiated with ultraviolet ray, heated, or rinsed in order to peel thefirst adhesive.

It is to be noted that the removal of the first adhesive and curing ofthe second adhesive may be carried out in one step. For example, in thecase where a heat peeling type resin and a heat curable resin, or anultraviolet ray peeling type resin and an ultraviolet ray curable resinare used for the first adhesive and the second adhesive respectively,the removing and the curing can be carried out by one time of heating oran ultraviolet ray irradiation.

As described above, a high functional integrated circuit fixed on aplastic substrate can be formed.

The metal oxide 13 may be all removed, or a part or most thereof may bescattered (left) under the peeled layer in the high functionalintegrated circuit. In the case where the metal oxide 13 is left, it maybe removed by etching and the like and then fixed on a flexiblesubstrate such as a plastic substrate. At this time, an oxide filmcontaining silicon may be removed as well.

While an IC formed of a silicon wafer has a thickness of 50 μm, a highfunctional integrated circuit of the invention is formed quite thin as asemiconductor film separated into islands with a thickness of 10 to 200nm is used. As a result, a wireless processor or a wireless memory ofthe invention can be quite thin, flexible, and lightweight. Further, awireless processor or a wireless memory which is superior in shockresistance and flexibility can be obtained.

Moreover, back-grind treatment which may cause a crack or a mark ofgrind is not required unlike an IC formed of a silicon wafer. Thus,variations in thickness is about several hundreds nm at most since itdepends on variations in forming a semiconductor film and the like. Thisis considerably smaller than the variations of several to severalhundreds μm caused by the back-grind treatment.

By using the SPOP method in this manner, a substrate over which anelement forming region is formed can be reused, which results inreducing the unit price of a processor or a memory. Further, a substrateover which an element forming region is formed is not required totransmit laser light, thus design freedom can be increased.

Embodiment Mode 13

In this embodiment mode, a method for fixing an element forming regionto a flexible substrate in a different manner than the aforementionedembodiment modes is described.

As shown in FIG. 15A, a peeling layer 30 and a peeled layer including anelement forming region 45 are sequentially formed over an insulatingsubstrate 210. In this embodiment mode, an antenna 105 may be formedover the element forming region 45. It is needless to say thatconfigurations of the element forming region 45 and the antenna are notlimited to these. The configuration or the manufacturing method of thepeeled layer including the element forming region 45 is similar toEmbodiment Mode 12; therefore, description thereon is omitted here.

The peeling layer 30 can be formed of a film containing silicon or ametal film. The film containing silicon may be formed of any of anamorphous semiconductor, a semi-amorphous semiconductor (also referredto as an SAS) in which an amorphous state and a crystalline state aremixed, or a crystalline semiconductor. It is to be noted that an SASincludes a micro-crystalline semiconductor in which a crystal grain of0.5 to 20 nm can be observed in an amorphous semiconductor. The peeledlayer 30 can be formed by a sputtering method, a plasma CVD method, orthe like. The peeling layer 30 may be formed with a thickness of 0.03 to1 μm, and may also be formed with a thickness of 0.03 μm or thinner aslong as the thickness is acceptable for a deposition apparatus of thepeeling layer.

The peeling layer containing silicon may be added an element such asphosphorus and boron. Further, the element may be activated by heat orthe like. By adding these elements, response of the peeling layer, thatis an etching rate can be improved.

Further, an insulating film is formed over the peeling layer in a regionin contact with the peeling layer 30. The insulating film can functionas a base film of a thin film transistor. As the insulating film, asingle layer structure or a stacked-layer structure of an insulatingfilm containing oxygen or nitrogen, such as silicon oxide (SiO_(x)),silicon nitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y)) (x>y), andsilicon nitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . ) can beused. In the case of a stacked-layer structure of three layers, forexample, a silicon oxide film, a silicon oxynitride film, and a siliconoxide film can be used as a first insulting film, a second insultingfilm, and a third insulating film respectively. These insulating filmsare preferably formed of silicon oxynitride films in consideration of animpurity diffusion from the insulating substrate (the first substrate)210 and the like. However, the silicon oxynitride film is inferior incontact with the peeling layer and a semiconductor film of a TFT.Therefore, it is preferable to employ a stacked-layer structure of threelayers of the peeling layer, the semiconductor layer, and a siliconoxide film which is superior in contact with the silicon oxynitridefilm.

In such a state, an opening portion (such as a groove or a hole) 32 isformed so as to expose the peeling layer 30 except in the elementforming region 45. A support substrate 33 in which a hole 34 is formedis fixed on the insulating substrate 210 with an adhesive 38. Theadhesive 38 may be a resin material such as an ultraviolet ray curableresin and a heat curable resin, a double-faced tape, and the like.

As shown in FIG. 15B, an etchant 35 is filled in the opening portion 32through the hole 34. As a result, the peeling layer 30 can be removed. Ametal film as the peeling layer can be removed at least by a reactantreacting with the etchant.

As the etchant, a gas or a liquid containing halogenated fluoride can beused. As halogenated fluoride, for example, ClF₃ (chlorine trifluoride)can be used. With such an etchant, the peeling layer 30 is selectivelyetched. In specific, the peeling layer 30 can be removed by using a lowpressure CVD apparatus at a temperature of 350° C., a flow rate of ClF₃at 300 sccm and a pressure of 6 Torr (6×133 Pa) for 3 hours.

In this manner, the peeling layer 30 is removed, the insulatingsubstrate 210 is peeled off, thus the element forming region 45 can befixed on the flexible substrate 110 such as a plastic substrate and aplastic film substrate by using an adhesive 111. As the adhesive, aresin material such as an ultraviolet ray curable resin and a heatcurable resin, a double-faced tape, and the like can be used.

In the case of forming a wireless memory in this manner, the insulatingsubstrate 210 can be reused, which can reduce the unit price of awireless memory. Further, the insulating substrate 210 is not requiredto transmit laser light, therefore, the design freedom can be increased.

Embodiment Mode 14

In this embodiment mode, a method for fixing an element forming regionto a flexible substrate by using a different peeling layer than thatdescribed in the aforementioned embodiment modes, and manufacturingsteps of a thin film transistor are described.

In this embodiment mode, a metal is used for the peeling layer. As thepeeling layer, a single layer or stacked layers formed of an elementselected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, and Ir,an alloy material containing the aforementioned element as a maincomponent, or a compound material thereof can be used.

These metal films can be formed by a sputtering method, a plasma CVDmethod, and the like. In specific, when employing a sputtering method,the metal film may be formed over the first substrate with a metal as atarget. The metal film may be formed with a thickness of 10 to 200 nm,or preferably 50 to 75 nm. A metal film which is nitrided (nitride metalfilm) may be used instead of the metal film. Furthermore, nitrogen oroxygen may be added to the metal film. For example, nitrogen or oxygenmay be ion implanted to the metal film. Alternatively, it may be addedby a sputtering method in a chamber of nitrogen or oxygen atmosphere, ora nitride metal may be used as a target. At this time, in the case ofusing a mixture of the aforementioned metals (for example, an alloy of Wand Mo: W_((x))Mo_((1-x))) for the metal film, the metal film may beformed by a sputtering method using a plurality of targets such as afirst metal (W) and a second metal (Mo) or an alloy of the first metal(W), and the second metal (Mo) in a deposition chamber.

Then, over the metal film is formed an oxide, a nitride, or a nitrideoxide containing the aforementioned metal. The oxide, nitride, or thenitride oxide containing the aforementioned metal is sometimes referredto as a reactant collectively. For example, in the case of using W, Mo,or a mixture of W and Mo to the metal film, the oxide, nitride, or thenitride oxide containing the aforementioned metal are an oxide, anitride, or a nitride oxide of W, Mo, or a mixture of W and Mo.

Such a reactant is formed when forming a film containing an oxide, anitride, or a nitride oxide over the surface of the metal film.

In this embodiment mode, a silicon oxide film 212 is formed over a metalfilm 211 containing W as shown in FIG. 16A. Then, an oxide filmcontaining W, for example, WO_(x) (x=2 to 3) 213 (hereinafter alsoreferred to as a reactant 213) is formed over the surface of the metalfilm 211 containing W. Similarly, by forming a silicon nitride film overthe metal film 211 containing W, a nitride film containing W is formed.By forming a silicon nitride oxide film over the metal film 211containing W, a nitride oxide film containing W can be formed.

The aforementioned oxide as a reactant may be formed by treating themetal film with a solution containing sulfuric acid, hydrochloric acid,or nitric acid, a solution obtained by mixing sulfuric acid,hydrochloric acid, or nitric acid with a hydrogen peroxide solution, orozone water. As other methods, oxidation may be carried out, afterforming the metal film, by plasma treatment in an oxygen atmosphere, orwith ozone generated by ultraviolet ray irradiation in an atmospherecontaining oxygen. Further, a thin oxide film may be formed by heattreatment using a clean oven at around 200 to 350° C.

By selecting the metal film and reactant formed in this manner, theetching rate can be controlled.

The reactant formed over the surface of the metal film in this mannermay chemically change its state due to heat treatment of subsequentsteps and the like. For example, in the case of forming an oxide filmcontaining W, a valency of tungsten oxide (WO_(x) (x=2 to 3)) changes.

Then, a metal film and a reactant containing the metal thereof can beused as the peeling layer.

After that, an insulating film 36 which functions as a base film of athin film transistor is formed over the silicon oxide film 212. As theinsulating film, a single layer structure or a stacked-layer structureof an insulating film containing oxygen or nitrogen, such as siliconoxide (SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride(SiO_(x)N_(y)) (x>y), and silicon nitride oxide (SiN_(x)O_(y)) (x>y) (x,y=1, 2 . . . ) can be used. In the case of a stacked-layer structure oftwo layers, a silicon nitride film 36 a and a silicon oxynitride film 36b can be used as a first insulating film and a second insulating filmrespectively. With these insulating films, impurity dispersion from theinsulating substrate 210 and the like can be reduced.

After that, a semiconductor film is formed and patterned into apredetermined shape, thereby an island-shape semiconductor film 214 isformed.

The semiconductor film 214 may be any one of an amorphous semiconductor,an SAS in which an amorphous state and a crystalline state are mixed, amicro-crystalline semiconductor in which a crystal grain of 0.5 to 20 nmcan be observed in an amorphous semiconductor, or a crystallinesemiconductor.

In this embodiment mode, an amorphous semiconductor film is formed andthen crystallized by heat treatment so as to form a crystallinesemiconductor film. The heat treatment may be performed by using aheating furnace, laser irradiation, irradiation of light generated froma lamp instead of laser light (hereinafter referred to as a lampannealing), or a combination of them.

In the case of laser irradiation, a continuous wave laser beam (CW laserbeam) or a pulsed wave laser beam (pulsed laser beam) can be used. Asthe laser beam, a beam emitted from one or plural kinds of an Ar laser,a Kr laser, an excimer laser, a YAG laser, a Y₂O₃ laser, a YVO₄ laser, aYLF laser, a YAlO₃ laser, a glass laser, a ruby laser, an alexandritelaser, a Ti: sapphire laser, a copper vapor laser, and a gold vaporlaser, can be used. A laser beam having a fundamental wave of suchlasers or a second to a fourth harmonic of the fundamental wave isirradiated to obtain a crystal with a large grain size. Typically, forinstance, the second harmonic (532 nm) or the third harmonic (355 nm) ofan Nd:YVO₄ laser (fundamental wave of 1064 nm) can be used. In thiscase, the power density of about 0.01 to 100 MW/cm² (preferably, 0.1 to10 MW/cm²) is required. The scanning rate is approximately set about 10to 2000 cm/sec to irradiate the semiconductor film.

An incident angle θ of the laser beam against the semiconductor film maybe set 0<θ<90. As a result, interference of the laser beam can beprevented.

A continuous wave fundamental harmonic laser beam and a continuous wavehigher harmonic laser beam may be emitted. Alternatively, a continuouswave fundamental harmonic laser beam and a pulsed wave higher harmoniclaser beam may be emitted. By emitting a plurality of laser beams,energy can be supplied.

A laser beam, which is a pulse oscillation laser beam, and which canoscillate laser at an oscillation frequency capable of emitting laserlight of a next pulse during the period between melting due to laserlight and solidifying of the semiconductor film can also be used. Byoscillating the laser beam at such the frequency, crystal grains thatare continuously grown in the scanning direction can be obtained. Aspecific oscillation frequency of the laser beam is 10 MHz or higher. Anotably higher frequency band is used than a frequency band of severaltens to several hundreds Hz that is generally used.

The laser beam may be emitted in the presence of an inert gas such as arare gas or nitrogen. Accordingly, a rough surface of a semiconductordue to the laser beam irradiation, flatness of the semiconductor surfacecan be improved, and variations of a threshold value due to variationsof interface state density can be prevented.

Alternatively, a microcrystalline semiconductor film may be formed byusing SiH₄ and F₂, or SiH₄ and H₂, and the microcrystallinesemiconductor film may be crystallized by laser irradiation as mentionedabove.

In the case of using a heating furnace as another heat treatment, anamorphous semiconductor film is heated at 500 to 550° C. for 2 to 20hours. In this instance, the temperature is preferably set atmulti-steps in the range of 500 to 550° C. so as to increase gradually.By an initial low temperature heating process, hydrogen or the like inthe amorphous semiconductor film is released. Accordingly, so-calledhydrogen releasing reaction can be performed, which leads to reduceroughness of a film surface due to crystallization. Moreover, a metalelement that promotes crystallization, for example, nickel, ispreferably formed over the amorphous semiconductor film since heatingtemperature can be reduced. Even in the crystallization using the metalelement, the amorphous semiconductor film can be heated at 600 to 950°C.

There is fear that the metal element may adversely affect the electriccharacteristics of a semiconductor element; therefore, a getteringprocess is required to be performed for reducing or removing the metalelement. For example, a process for trapping the metal element using theamorphous semiconductor film as a gettering sink is performed.

Alternatively, a crystalline semiconductor film may be formed directlyover a subject surface. In this instance, the crystalline semiconductorfilm can be formed directly over the subject surface by using a fluoridesource gas such as GeF₄ or F₂, and a silane source gas such as SiH₄ orSi₂H₆ and by utilizing heat or plasma. In the case that the crystallinesemiconductor film is directly formed and high temperature processing isrequired, a quartz substrate having high heat resistance is preferablyused.

The semiconductor film formed in this manner can be used for a firstN-type TFT 215, a second N-type TFT 216, a P-type TFT 217, and acapacitor 218. The TFT may have any structures such as a single drainstructure including only a high concentration impurity region, an LDDregion including a low concentration impurity region, and a GOLDstructure in which a low concentration impurity region is overlappedwith a gate electrode. In this embodiment mode, each of the first N-typeTFT and the P-type TFT has a single drain structure while the secondN-type TFT has an LDD structure.

As shown in FIG. 16A, an impurity element is added to a semiconductorfilm to be the capacitor 218. In this embodiment mode, an N-typeimpurity element, for example, phosphorus (P) and the like can be added.At this time, a semiconductor film in a TFT region is covered with amask 219 so as not to be added impurity elements. A resist mask can beused as the mask.

After that, as shown in FIG. 16B, an insulating film 303 which functionsas a gate insulating film is formed. As the insulating film, a singlelayer structure or a stacked-layer structure of an insulating filmcontaining oxygen or nitrogen, such as silicon oxide (SiO_(x)), siliconnitride (SiN_(x)), silicon oxynitride (SiO_(x)N) (x>y), and siliconnitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . ) can be used. Inthis embodiment mode, a silicon nitride film is used. The siliconnitride film has a higher dielectric constant than a silicon oxide film.Therefore, even when the thickness of the gate insulating film becomesrather thick, unnecessary gate capacitance can be reduced. In thismanner, it is preferable to form the gate insulating using an insulatingmaterial with a higher dielectric constant as TFTs and the like becomefiner.

Then, a conductive film which functions as a gate electrode is formed. Agate electrode 304 may be a single layer or stacked layers formed of anelement selected from Ta, W, Ti, Mo, Al, and Cu, an alloy material or acompound material having the aforementioned element as a main component.In this embodiment mode, a first conductive film 304 a with a thicknessof 10 to 50 nm, for example a tantalum nitride film with a thickness of30 nm, is formed, and a second conductive film 304 b with a thickness of200 to 400 nm, for example a tungsten film with a thickness of 370 nm,is formed sequentially.

The first and second conductive films 304 a and 304 b are etched intopredetermined shapes. In this embodiment mode, the first and secondconductive films 304 a and 304 b are formed to have tapers at edgeportions.

Further, the first and second conductive films 304 a and 304 b may beetched. In this embodiment mode, the first and second conductive films304 a and 304 b are etched to have no tapers, that is, to haveperpendicular edge portions as shown in FIG. 16C. At this time, by usingan etchant with a different etching rate to the first and secondconductive films 304 a and 304 b, the first conductive film 304 a can bemore etched.

In order to form a TFT having a fine gate length, a width of aconductive film may be shortened. Therefore, a mask provided for etchingthe conductive film, for example a step of thinning a resist mask may beprovided. For example, the resist mask can be thinned by applying oxygenplasma.

As shown in FIG. 17A, a mask to cover the P-type TFT 217, for example aresist mask 220 is formed. After that, an element imparting N-typeconductivity, for example phosphorus (P) is added to the semiconductorfilm 214. Then, by controlling the amount of element to be added, a lowconcentration impurity region 221 is formed. Then, a resist mask 220 isremoved.

After that, a mask to cover a portion of each of the first and secondN-type TFTs 215 and 216, for example a resist mask 222 is formed asshown in FIG. 17B, and then an element imparting N-type conductivity isadded to the semiconductor film 214. By controlling the amount ofelement to be added, high concentration impurity regions 223 are formed.At this time, as impurity regions included in the second N-type TFT 216can all be high concentration impurity regions as the second conductivefilm 304 a is quite thin. Moreover, after forming a resist to cover onlythe second conductive film 304 b at the same time as the resist mask222, a high concentration impurity region may be formed by adding theelement.

Further, a sidewall may be provided instead of the resist mask 222 toform a high concentration impurity region.

At this time, the resist mask 220 is formed again so that the element isnot added to the P-type TFT. Alternatively, the resist mask 220 may beused without being removed in the preceding step.

Subsequently, in order to form the P-type TFT 217, a mask to cover theN-type TFTs 215 and 216, and the capacitor 218, for example a resistmask 224 is formed as shown in FIG. 17C. Then, an element impartingP-type conductivity, for example, boron (B) is added to thesemiconductor film 214. At this time, by controlling the amount ofelement to be added, an impurity region 230 can be formed. Here, theimpurity region is not distinguished by high concentration or lowconcentration because high or low of the impurity region is determinedrelatively and the P-type TFT has only one impurity region.

After that, heat treatment is performed appropriately to alleviate adefect in a semiconductor film. For example, after forming theinsulating films 225 and 226 sequentially as shown in FIG. 18A, heattreatment can be performed. As the insulating films 225 and 226, aninsulating film containing oxygen or nitrogen, such as silicon oxide(SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y))(x>y), and silicon nitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . )can be used. In this embodiment mode, SiON is used for the insulatingfilm 225 while SiNO is used for the insulating film 226. By hydrogencontained in these insulating films, dangling bonds in the semiconductorfilm can be reduced.

After that, an interlayer insulating film 227 is formed to improveplanarity. Such an interlayer insulating film can be formed of anorganic material or an inorganic material. As an organic material,polyimide, acryl, polyamide, polyimide amide, resist orbenzocyclobutene, siloxane, and polysilazane can be used. Siloxane has abackbone structure of a bond of silicon (Si) and oxygen (O). As asubstituent, an organic group containing at least hydrogen (for example,an alkyl group, and aromatic carbon hydride) and a fluoro group may beused. Alternatively, both of the organic group containing at leasthydrogen and the fluoro group may be used as the substituent.Polysilazane is formed of a liquid material containing a polymermaterial containing a bond of silicon (Si) and nitrogen (N), what isso-called polysilazane as a starting material. As an inorganic material,an insulating film containing oxygen or nitrogen, such as silicon oxide(SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y))(x>y), and silicon nitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . )can be used. Further, as an interlayer insulating film, a stacked-layerstructure of these insulating films may be used as well. In particular,when an interlayer insulating film is formed using an organic material,moisture and oxygen are absorbed by the organic material while planarityis increased. In order to prevent this, an insulating film containing aninorganic material may be formed over the organic material. When aninsulating film containing nitrogen is used as an inorganic material, analkaline ion such as Na can be prevented from entering.

Subsequently, an opening portion is formed in the interlayer insulatingfilm 227, the insulating films 225 and 226, and a gate insulating film303 so as to expose the high concentration impurity region 223 and theimpurity region 230. Then, a conductive film 228 which functions as awiring is formed at the opening portion.

After that, an insulating film which functions as a protective film maybe formed. The insulating film which functions as the protective filmpreferably contains nitrogen.

In this manner, when a thin film transistor is formed, the openingportion (such as a groove and a hole) 32 is formed except in a region inwhich an element forming region having a TFT or a capacitor is formedwhile, so as to expose the reactant 213. In this embodiment mode, theopening portion 32 is formed between the P-type TFT 217 and thecapacitor 218. Similarly to FIG. 15B, the support substrate 33 in whichthe hole 34 is formed is fixed to the insulating substrate 210 by usingan adhesive and the like. The adhesive may be a resin material such asan ultraviolet ray curable resin and a heat curable resin, adouble-faced tape, and the like.

After that, the etchant 35 is filled in the opening portion 32 throughthe hole 34. As a result, the peeling layer 30 can be removed. Thepeeling layer in this embodiment mode is the metal film 211 and thereactant 213 formed over the insulating substrate. By removing the metalfilm 211 and the reactant 213, the insulating substrate can be peeledoff. In the case of using the metal film as the peeling layer, thesupport substrate 33 can be removed at least by a reactant reacting withthe etchant.

As the etchant, a gas or a liquid containing halogenated fluoride can beused to chemically remove the peeling layer. As halogenated fluoride,for example, ClF₃ (chlorine trifluoride) can be used. The peeling layeris preferably formed of W and WO₃ which is an oxide thereof because itreacts quickly with ClF₃ and the peeling layer can be removed in a shorttime. It is preferable to use an etchant to remove the peeling layerchemically as generation of a reaction residue and the like can bereduced.

Other than the method for chemically removing the peeling layer asdescribed above, the peeling layer can be removed physically by applyinga stress. In the case where an oxide film containing W is formed asdescribed above, tungsten oxide (WO_(x) (x=2 to 3)) can easily be peeledoff physically when a valency thereof changes.

The methods for removing the peeling layer chemically and physically maybe used in combination. As a result, the peeling layer can be removedmore easily and quickly.

In this manner, the peeling layer is removed, the insulating substrate210 is peeled off, and thus the element forming region 45 can be fixedon a flexible substrate such as a plastic substrate and a plastic filmsubstrate by using an adhesive. As the adhesive, a resin material suchas an ultraviolet ray curable resin and a heat curable resin, adouble-faced tape, and the like can be used.

In the case of forming a wireless memory in this manner, the insulatingsubstrate 210 can be reused, which can reduce the unit price of awireless memory. Further, the insulating substrate 210 is not requiredto transmit laser light; therefore, the design freedom can be increased.

Embodiment Mode 15

In this embodiment mode, a structure and a manufacturing method of a TFTused for a wireless processor or a wireless memory is described.

As shown in FIG. 19A, the metal film 211, the oxide film 213 containingthe metal, and a silicon oxide film 212 are sequentially provided overthe insulating substrate 210. In the case of using W for the metal film,the oxide film (WO_(x) (x=2 to 3)) 213 containing W is formed. Then, aconductive film 53 which functions as a bottom electrode (also referredto as a bottom electrode 53) is formed. The conductive film 53 can beformed of a polycrystalline semiconductor to which a metal or animpurity of one conductivity type is added. In the case of using ametal, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta),aluminum (Al) and the like can be used. The conductive film 53 can beetched into a predetermined shape by using a mask, for example a resistmask. At this time, the resist mask can be thinned by oxygen plasma, forexample. By such steps, the conductive film 53 to be a gate electrodecan be thinned.

FIG. 19B is a top plan view of the conductive film 53 while FIG. 19Acorresponds to a cross-sectional view taken along a-b in FIG. 19B.

As shown in FIG. 20A, insulating films 36 a and 36 b which function as abase film are formed. In this embodiment mode, a silicon nitride film 36a and a silicon oxynitride film 36 b are formed as a first insulatingfilm and a second insulating film respectively, however, the order ofstacking layers is not limited to this.

Subsequently, the semiconductor film 214 having a predetermined shape,the gate insulating film 303 provided so as to cover the semiconductorfilm 214, and the conductive film 304 a which functions as a gateelectrode are sequentially formed. In order to pattern the conductivefilm 304 a into a predetermined shape, a mask, for example, a resistmask is formed. At this time, a resist mask 54 having a predeterminedshape can be formed by back exposure using the conductive film 53 as abottom electrode. By using the resist mask 54, the conductive film 304 ais patterned into a predetermined shape.

FIG. 20B is a top plan view of the conductive film 304 a over which aresist mask is provided while FIG. 20A corresponds to a cross-sectionalview taken along a-b in FIG. 20B.

After that, as shown in FIG. 21A, an impurity element is added to thesemiconductor film 214 by using the patterned conductive film 304 a.

In order to control the bottom electrode 53 and the conductive film 304a independently, a wiring is provided for each of them. At this time,for providing a contact hole to connect the bottom electrode 53 and thewiring, a portion of the conductive film 304 a is removed. At this time,a portion of the conductive film 304 a may be etched by providing amask, for example a resist mask over the conductive film 304 a.

FIG. 21B is a top plan view of the conductive film 304 a which ispartially etched while FIG. 21A corresponds to a cross-sectional viewtaken along a-b in FIG. 21B.

In the case of controlling the bottom electrode 53 and the conductivefilm 304 a similarly, a portion of the conductive film 304 a is notrequired to be removed. By forming a contact hole in the gate insulatingfilm 303 provided over the bottom electrode 53 and forming theconductive film 304 a in the contact hole, the bottom electrode 53 andthe conductive film 304 a can be connected.

Next, as shown in FIG. 22A, the conductive film 304 b may be formed sothat the gate electrode has a stacked-layer structure. In thisembodiment mode, the conductive film 304 b can be patterned into apredetermined shape by using a mask, for example a resist mask. Then, animpurity element may be added with the conductive film 304 b provided.At this time, a low concentration impurity region can be formed so as tooverlap the conductive film 304 a.

After that, an insulating film 305 is formed so as to cover the gateelectrode. The insulating film 305 can be formed of an insulating filmcontaining oxygen or nitrogen, such as silicon oxide (SiO_(x)), siliconnitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y)) (x>y), and siliconnitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . ). In thisembodiment mode, silicon oxynitride is used. In particular, morehydrogen can be contained by forming the insulating film 305 by a plasmaCVD method. By this hydrogen, dangling bonds in the semiconductor film214 can be reduced. Accordingly, it is preferable to apply heattreatment with the insulating film 305 provided.

After that, an interlayer insulating film 306 is formed so as to coverthe insulating film 305 to improve planarity. Such an interlayerinsulating film can be formed of an organic material or an inorganicmaterial. As an organic material, polyimide, acryl, polyamide, polyimideamide, resist or benzocyclobutene, siloxane, and polysilazane can beused. Siloxane has a backbone structure of silicon (Si) and oxygen (O),and is formed of a polymer material as a starting material containing atleast hydrogen or at least one of fluoride, an alkyl group, and anaromatic carbon hydride as a substituent. Polysilazane is formed of aliquid material containing a polymer material containing a bond ofsilicon (Si) and nitrogen (N), so-called polysilazane as a startingmaterial. As an inorganic material, an insulating film containing oxygenor nitrogen, such as silicon oxide (SiO_(x)), silicon nitride (SiN_(x)),silicon oxynitride (SiO_(x)N_(y)) (x>y), and silicon nitride oxide(SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . ) can be used. Further, as aninterlayer insulating film, a stacked-layer structure of theseinsulating films may be used as well. In particular, when an interlayerinsulating film is formed of an organic material, moisture and oxygenare absorbed by the organic material while planarity is increased. Inorder to prevent this, an insulating film containing an inorganicmaterial may be formed over the organic material. When an insulatingfilm containing nitrogen is used as an inorganic material, an alkalineion such as Na can be prevented from entering.

The heat treatment after forming the insulating film 305 may beperformed after forming the interlayer insulating film 306 as well.

After that, a contact hole is formed in the interlayer insulating film306, the insulating film 305, and the gate insulating film 303, therebya wiring 307 connected to an impurity region is formed.

Furthermore, an insulating film which functions as a protective film maybe formed over the wiring. Such an insulating film can be formed of aninsulating film containing oxygen or nitrogen, such as silicon oxide(SiO_(x)), silicon nitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y))(x>y), and silicon nitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . .). In particular, an insulating film containing nitrogen is preferablyused for preventing an impurity element from entering.

FIG. 22B is a top plan view in which a wiring 307, a wiring connected toa bottom electrode, and a wiring connected to a gate electrode areprovided while FIG. 22A corresponds to a cross-sectional view takenalong a-b in FIG. 22B. It is to be noted that the conductive film 304 bis not shown.

In this manner, a TFT including a bottom electrode can be formed. TheTFT including the bottom electrode can be controlled independently ofthe gate electrode. Accordingly, in the case of forming a fine TFT, acurrent may flow even when inputting a signal to the gate electrode tobe turned off. At this time, the TFT can be accurately turned off bycontrolling the bottom electrode. As a result, low power consumption canbe realized.

With the bottom electrode, a threshold voltage (Vth) can also becontrolled.

Embodiment Mode 16

In this embodiment mode, a structure of a TFT which is different thanthe aforementioned embodiment modes is described.

FIG. 23 shows an example of applying a top-gate type TFT. The peelinglayer 30, the first insulating films 36 and 301 which are stacked areformed over the first substrate 210, over which an element formingregion (a layer including this is referred to as an element forminglayer) 45 is formed. The first insulating film 301 at least functions asa base film for a semiconductor film 302. The second insulating film 303which functions as a gate insulating film is provided so as to cover thesemiconductor film 302. The conductive film 304 which functions as agate electrode for the semiconductor film 302 is formed over the secondinsulating film 303, over which the third insulating film 305 whichfunctions as a protective layer and the fourth insulating film 306 whichfunctions as an interlayer insulating film are provided as protectivelayers. Above the insulating film 306, the fifth insulating film 308 maybe formed as a protective layer.

The semiconductor film 302 is formed of a semiconductor having acrystalline structure (a crystalline semiconductor), to which anamorphous semiconductor or a single crystalline semiconductor can beapplied. In particular, it is preferable to apply a crystallinesemiconductor which is obtained by crystallizing an amorphous ormicro-crystalline semiconductor by laser light irradiation, acrystalline semiconductor obtained by crystallization by heat treatment,and a crystalline semiconductor obtained by crystallization by acombination of heat treatment and laser light irradiation. In the heattreatment, a metal element which promotes a crystallization of a siliconsemiconductor, such as nickel can be used for crystallization.

In the case of the crystallization by laser light irradiation,crystallization can be carried out by irradiating continuous wave laserlight. Alternatively, by the irradiation of high repetition frequencyultrashort light pulse of which repetition frequency is 10 MHz orhigher, pulse width is 1 nano second or shorter, or preferably 1 to 100pico seconds, crystallization can be performed by continuously moving amelt band which is a melted semiconductor in the direction of laserlight irradiation. According to such a crystallizing method to irradiatewith laser light, a crystalline semiconductor having large crystalgrains extending in one direction can be obtained. By adjusting adrifting direction of carriers to the extending direction of the crystalgrains, field effect mobility of a transistor can be enhanced. Forexample, the field effect mobility of 400 cm²/V·sec or higher can berealized.

As described above, the heat treatment at 400° C. or higher is requiredto peel the peeling layer 30 formed of tungsten (W) at an interface withthe peeled layer 12 accurately. This heat treatment can be performed asthe heat crystallization step of the semiconductor film.

The gate electrode 304 can be formed of a metal or a polycrystallinesemiconductor which is added an impurity of one conductivity type. Inthe case of using a metal, tungsten (W), molybdenum (Mo), titanium (Ti),tantalum (Ta), aluminum (Al) and the like can be used. Further, a metalnitride obtained by nitriding the aforementioned metal can be used.Alternatively, a stacked-layer structure of a first layer formed of themetal nitride and a second layer formed of the metal may be employed aswell. In the case of the stacked-layer structure, so-called a hat shapemay be employed in which edge portions of the first layer projectoutside than edge portions of the second layer. In this case, barrierproperty can be enhanced when the first layer is formed of a metalnitride. Accordingly, it can be prevented that the metal of the secondlayer diffuses to the second insulating film 303 and the semiconductorfilm 302 underneath.

A transistor formed by using the semiconductor film 302, the secondinsulating film 303, the gate electrode 304 and the like in combinationcan employ various structures such as a single drain structure, an LDD(Lightly Doped Drain) structure, and a gate overlap drain structure.Further, a single gate structure, a multi-gate structure in whichtransistors to which gate voltages of the same potentials areequivalently applied are connected in series, and a dual gate structurein which a semiconductor film is sandwiched by gate electrodes fromabove and below can be applied.

The fourth insulating film 306 can be formed of an inorganic insulatingmaterial such as silicon oxide and silicon oxynitride and an organicinsulating material such as an acryl resin and a polyimide resin. In thecase of using an application method such as a spin coating method and aroll coating method, silicon oxide formed by heat treatment can be usedafter applying an insulating film material dissolved in an organicsolvent. For example, an insulating layer which can be formed by heattreatment at 200 to 400° C. can be used after forming a coated filmcontaining a siloxane bond. By using an insulating film formed by anapplication method as the fourth insulating film 306, the surfacethereof can be planarized by reflow. Moreover, the insulating film canbe planarized by a reflow. By forming a wiring over such a planarizedinsulating film, a breaking of the wiring can be prevented, which isefficient in the case of forming multi-layer wirings.

The wiring 307 is formed on the fourth insulating film 306. The wiring307 is preferably formed of a combination of a low resistant materialsuch as aluminum (Al) and a high-melting point metal material such astitanium (Ti) and molybdenum (Mo), for example a stacked-layer structureof titanium (Ti) and aluminum (Al) and a stacked-layer structure ofmolybdenum (Mo) and aluminum (Al).

After that, the components are transferred to a flexible substrate, andthen can be attached to a semiconductor device with an attaching agent.

FIG. 24 shows an example of applying a bottom gate type TFT. The peelinglayer 30 and the insulating film 36 are sequentially formed over thefirst substrate 210, over which the element forming layer 45 is formed.In the element forming layer 45, the gate electrode 304, the secondinsulating film 303 which functions as the gate insulating film, thesemiconductor film 302, a channel protective layer 309, the thirdinsulating film 305 which functions as a protective layer, and thefourth insulating film 306 which functions as an interlayer insulatingfilm are provided. Above the element forming layer 45, the fifthinsulating film 308 which functions as a protective film may beprovided. The fifth insulating film 308 can be formed to have a singlelayer structure or a stacked-layer structure of an insulating filmcontaining oxygen or nitrogen such as silicon oxide (SiO_(x)), siliconnitride (SiN_(x)), silicon oxynitride (SiO_(x)N_(y)) (x>y), and siliconnitride oxide (SiN_(x)O_(y)) (x>y) (x, y=1, 2 . . . ). The wiring 307can be formed over the third insulating film 305 or the fourthinsulating film 306.

After that, the components are transferred to a flexible substrate, andthen can be attached to a semiconductor device by an adhesive.

In this manner, a thin film transistor used for a high functionalintegrated circuit may be a top or bottom gate type transistor.Moreover, a top gate type transistor and a bottom gate type transistormay be used in combination. That is, the invention is not limited in thestructure of a thin film transistor.

Embodiment Mode 17

In this embodiment mode, the case of integrating an antenna in a highfunctional integrated circuit is described with reference to FIG. 25.

As described in Embodiment Mode 16, the element forming layer 45 coveredwith the fifth insulating film 308 is formed. The fifth insulating film308 can be formed of a material described in Embodiment Mode 16. In thecase of using a conductive material such as Cu of which diffusion isconcerned for an antenna material, it is preferable to use at least aninsulating film containing nitrogen for the fifth insulating film 308.As a wireless memory incorporating a high functional integrated circuitmay be touched by a bare hand, an alkaline metal such as Na may diffuse.Accordingly, it is preferable to form the fifth insulating film 308 soas to include at least an insulating film containing nitrogen.

After that, an antenna 502 is formed. The antenna 502 can be formed byany one of or a combination of a printing method, a sputtering method, adroplet discharging method, a plating method, a photolithography method,or a deposition method using a metal mask. For example, there is astacked-layer antenna in which a first antenna formed by any one of asputtering method, a droplet discharging method, a printing method, aphotolithography method, and a deposition method, and a second antennaformed so as to cover the first antenna by a plating method (anelectroless plating method or an electrolytic plating method) arestacked. It is preferable to form the antenna by a droplet dischargingmethod or the printing method as a conductive film is not required to bepatterned, thus the manufacturing steps can be reduced.

For the antenna material, a conductive material such as Ag (silver), Al(aluminum), Au (gold), Cu (copper), and Pt (platinum) can be used. Whenwiring resistance of the aforementioned materials is concerned, thewiring resistance can be reduced by forming the antenna thick. When anantenna forming region is wide, the wiring resistance can be reduced byforming the width of the antenna wider. Further, as described above, thewiring resistance may be reduced by using a stacked-layer antenna so asto be covered with a low resistant material. On the other hand, whenusing a conductive material such as Cu of which diffusion is considered,it is preferable to form an insulating film containing nitrogen so as tocover the surface over which the antenna is formed and/or around Cu.

When employing the droplet discharging method, the antenna can be formedby dropping Ag mixed in tetradecane as a solvent from a nozzle. At thistime, a base film formed of titanium oxide (TiO_(x)) may be formed overthe substrate for the antenna.

It is preferable to form a connecting terminal 503 for the antenna. Byusing the connecting terminal, the antenna can be simply and easilyconnected to a wiring of the high functional integrated circuit. Theconnecting terminal is not necessarily provided, and the shape andposition of the antenna are not limited to those shown in FIG. 25.

The planarity of the antenna formed as described above may be improvedby applying a pressure thereto. As a result, the antenna can be formedinto a thin film. Heat may be applied in addition to a pressure, andpress treatment and heat treatment can be performed at the same time. Inthe case where the solvent is required to be removed by heat treatmentwhen employing a droplet discharging method, the press treatment and theheat treatment are preferably performed at the same time.

An opening portion is formed in the fifth insulating film 308 to connectthe wiring and the antenna 502. At this time, it is preferable to formthe opening portion under the connecting terminal 503.

Heretofore described is the case of forming the antenna 502 over thefifth insulating film 308 over the wirings; however, the antenna may beformed in the same layer as the wirings.

In this embodiment mode, the antenna is directly formed over the highfunctional integrated circuit; however, the antenna may be formed over adifferent substrate than that of the high functional integrated circuitand attached thereto.

A wireless memory can be formed by incorporating the antenna formed inthis manner.

The high functional integrated circuit can be peeled off by any of themethods described in the aforementioned embodiment modes.

Subsequently, an attaching agent 116 is formed on the back of a flexiblesubstrate 101. As the attaching agent 116, a magnet or a sealingmaterial can be used. With the attaching agent, a wireless memory can befixed to a main body of a semiconductor device and the like.

Embodiment Mode 18

In this embodiment mode, a TFT structure applied to a circuit in awireless processor or a wireless memory and the like is described.

A wireless processor of the invention typically has a structure asdescribed in Embodiment Mode (refer to FIG. 1). The circuit blocksforming the wireless processor are sometimes required to have differentoperation characteristics; therefore, it is preferable to optimize theelement structure accordingly. In this embodiment mode, a structure of awireless processor is described representatively, although this appliesto a wireless memory as well.

For example, as electromagnetic wave is inputted as an input signal to awireless processor, a higher voltage is applied to an element near aninput terminal as the electromagnetic field is stronger. In the case ofproviding a limiter circuit so that such a high voltage is notgenerated, a large current flows to the limiter circuit. It ispreferable to employ a highly reliable element structure for such anelement, for example an LDD structure is preferred to a single drainstructure. Alternatively, it is preferable to employ a structure to forma gate insulating film thick. In a wireless processor, it is preferablethat such a TFT structure which has an LDD structure and a gateinsulating film formed thick be applied to an input portion of a circuitconnected to the RF circuit 5001. For example, an input portion of acircuit connected to the power source circuit 5002, an input portion ofa circuit connected to the clock generating circuit 5003, and an inputportion of a circuit connected to the data demodulation circuit 5004 areapplicable. Moreover, a TFT structure which has an LDD structure and agate insulating film formed thick are preferably applied to a limitercircuit.

On the other hand, the clock generating circuit 5003 and the powersource circuit 5002 are required to operate at high rate as inputsignals of the highest frequency are inputted thereto. Therefore, anelement which forms such a circuit preferably employs a TFT structurewhich can operate at high rate. For example, such a structure having ashortened channel length, a single drain structure, or a thinned gateinsulating film is preferably employed.

Further, an input signal is often separated into an antenna portion andan internal circuit through a capacitor. In that case, the levelrelation of potentials at two terminals of the capacitor is reversed,thus a MOS capacitor cannot be used. It is preferable to use a capacitorof which semiconductor active layer is doped in advance by utilizing agate insulating film which is superior in film quality. An example of acapacitor having such a TFT structure in a wireless processor is, acapacitor used in an input portion of the power source circuit 5002, theclock generating circuit 5003, or the data demodulation circuit 5004.

On the other hand, a digital signal is inputted to the CPU interface5006, the memory 5008, and the CPU 5007, of which operating frequency islower than the input signals. Therefore, a reliable structure such as anLDD structure is preferably used.

Embodiment Mode 19

Examples of a semiconductor device incorporating a wireless processor ora wireless memory of the invention are a video camera, a digital camera,a goggle type display (a head mounted display), a navigation system, anaudio reproducing device (a car audio set, an audio component set andthe like), a notebook personal computer, a game machine, a portableinformation terminal (a mobile computer, a portable phone, a portablegame machine, an electronic book, and the like), an image reproducingdevice provided with a recording medium (specifically, a device whichreproduces a recording medium such as a DVD: Digital Versatile Disc andhas a display which can display the reproduced image) and the like.Specific examples of these semiconductor devices are shown in FIGS. 26Ato 26D and 27A to 27E.

FIG. 26A illustrates a television receiver including a housing 5601, asupport base 5602, a display portion 5603 and the like. The televisionreceiver incorporates a driver of a wireless memory of the invention. Bymounting a wireless memory 5604 of the invention to a main body byattaching and the like, data stored in the wireless memory 5604 can beread and used in the television receiver.

FIG. 26B illustrates a notebook personal computer including a main body5611, a housing 5612, a display portion 5613, a keyboard 5614 and thelike. The notebook personal computer incorporates a driver of a wirelessmemory of the invention. By mounting a wireless memory 5615 of theinvention to a main body by attaching and the like, data stored in thewireless memory 5615 can be read and used in the notebook personalcomputer.

FIG. 26C illustrates a portable information terminal including a mainbody 5621, a display portion 5622, an operating key 5623, a modem 5624and the like. The portable information terminal incorporates a driver ofa wireless memory of the invention. By mounting a wireless memory 5625of the invention to a main body by attaching and the like, data storedin the wireless memory 5625 can be read and used in the portableinformation terminal.

FIG. 26D illustrates an electronic book including a main body 5631, adisplay portion 5632, an operating key 5633 and the like. The electronicbook incorporates a driver of a wireless memory 5634 of the invention.By mounting the wireless memory 5634 of the invention to a main body byattaching and the like, data stored in the wireless memory 5634 can beread and used in the electronic book.

FIG. 27A illustrates a portable information terminal including a mainbody 2001, a display portion 2002, an operating key 2003, a modem 2004and the like, and a wireless processor 2005 of the invention isattached. FIG. 27A shows a portable information terminal of which modem2004 can be demountable; however, the modem 2004 may be incorporated inthe main body 2001 as well. The wireless processor 2005 can be easilyincorporated by using a wireless processor interface of the invention,which can improve the function and performance.

FIG. 27B illustrates a portable phone including a main body 2101, adisplay portion 2102, an audio input portion 2103, an audio outputportion 2104, an operating key 2105, an external connecting port 2106,an antenna 2107 and the like, and a wireless processor 2108 of theinvention is attached. Note that power consumption of the portable phonecan be suppressed by displaying white text on a black background in thedisplay portion 2102. The wireless processor can be easily incorporatedby using a wireless processor interface of the invention, which canimprove the function and performance.

FIG. 27C illustrates an electronic card including a main body 2201, adisplay portion 2202, a connecting terminal 2203 and the like, and awireless processor 2204 of the invention is placed in a short distanceof the electronic card. The wireless processor can be easilyincorporated by using a wireless processor interface of the invention,which can improve the function and performance. It is needless to saythat a wireless processor may be attached to the electronic card. FIG.27C shows a contact type electronic card, although a wireless processorof the invention can be applied to a non-contact type electronic cardand an electronic card having both contact and non-contact functions.

FIG. 27D illustrates an electronic book including a main body 2301, adisplay portion 2302, an operating key 2303 and the like, and a wirelessprocessor 2304 of the invention is attached. The electronic book mayincorporate a modem in the main body 2301. The wireless processor can beeasily incorporated by using a wireless processor interface of theinvention, which can improve the function and performance.

FIG. 27E illustrates a sheet type personal computer including a mainbody 2401, a display portion 2402, a keyboard 2403, a touch pad 2404, anexternal connecting port 2405, a power plug 2406, and the like, and awireless processor 2407 of the invention is attached. The wirelessprocessor can be easily incorporated by suing a wireless processorinterface of the invention, which can improve the function andperformance.

As described above, an application range of the invention is quite wideand the invention can be applied to electronic devices of all fields.Note that the electronic devices of this embodiment mode can beimplemented in combination with any configurations described inEmbodiment Modes 1 to 18.

1. A wireless processor comprising: an element forming region includinga transistor having at least a channel forming region formed of onesemiconductor film among a plurality of semiconductor films separatedinto islands with thickness of 10 to 200 nm; and an antenna, wherein thetransistor is fixed on a flexible substrate; and wherein a highfunctional integrated circuit including the element forming region isformed.
 2. A wireless processor comprising: an element forming regionincluding a transistor having at least a channel forming region formedof one semiconductor film among a plurality of semiconductor filmsseparated into islands with thickness of 10 to 200 nm; an antenna; andan attaching agent for fixing a wireless processor to an object, whereinthe transistor is fixed on a flexible substrate; and wherein a highfunctional integrated circuit including the element forming region isformed.
 3. A wireless processor comprising: an element forming regionincluding a transistor having at least a channel forming region formedof one semiconductor film among semiconductor films separated intoislands with thickness of 10 to 200 nm; and a light detecting element ora light emitting element, wherein the transistor is fixed on a flexiblesubstrate; and wherein a high functional integrated circuit includingthe element forming region is formed.
 4. A wireless processorcomprising: an element forming region including a transistor having atleast a channel forming region formed of one semiconductor film amongsemiconductor films separated into islands with thickness of 10 to 200nm; a light detecting element or a light emitting element; and anattaching agent for fixing a wireless processor to an object, whereinthe transistor is fixed on a flexible substrate; and wherein a highfunctional integrated circuit including the element forming region isformed.
 5. The wireless processor according to claim 3 or 4, comprisingan antenna.
 6. The wireless processor according to claim 1, 2, or 5,wherein a power can be supplied through electromagnetic waves throughthe antenna.
 7. The wireless processor according to any one of claims 1to 6, wherein the high functional integrated circuit includes an SRAM, aDRAM, or a nonvolatile memory.
 8. An information processing systemcomprising: an element forming region including a transistor having atleast a channel forming region formed of one semiconductor film among aplurality of semiconductor films separated into islands with thicknessof 10 to 200 nm; and an antenna, wherein the transistor is fixed on aflexible substrate; and wherein a semiconductor device and a wirelessprocessor in which a high functional integrated circuit including theelement forming region is formed transmit and receive data through theantenna.
 9. An information processing system comprising: an elementforming region including a transistor having at least a channel formingregion formed of one semiconductor film among a plurality ofsemiconductor films separated into islands with thickness of 10 to 200nm; and a light detecting element or a light emitting element, whereinthe transistor is fixed on a flexible substrate; and wherein asemiconductor device and a wireless processor in which a high functionalintegrated circuit including the element forming region is formedtransmit and receive data through the light detecting element or thelight emitting element.
 10. The information processing system accordingto claim 9, wherein the wireless processor includes an antenna, andwherein the wireless processor and the semiconductor device transmit andreceive data through the antenna.
 11. The information processing systemaccording to any one of claims 8 to 10, wherein the semiconductor deviceincludes a wireless processor interface; and wherein the wirelessprocessor and the semiconductor device transmit and receive data byusing the wireless processor interface.
 12. The information processingsystem according to any one of claims 8 to 11, wherein a plurality ofthe wireless processor is provided for the one semiconductor device. 13.A semiconductor device comprising: an interface for a wirelessprocessor, including a PCI interface, a control circuit, and an electricwave interface; an arithmetic unit; and a memory unit.
 14. Asemiconductor device comprising: an interface for a wireless processor,including a PCI interface, a control circuit, and an electric waveinterface; an arithmetic unit; a memory unit; and and a hard disc. 15.The semiconductor device according to claim 13 or 14, wherein the memoryunit includes an SRAM, a DRAM, or a nonvolatile memory.
 16. A wirelessmemory comprising: an element forming region including a transistorhaving at least a channel forming region formed of one semiconductorfilm among a plurality of semiconductor films separated into islandswith thickness of 10 to 200 nm; and an antenna, wherein the transistoris fixed on a flexible substrate; and wherein a high functionalintegrated circuit including the element forming region is formed.
 17. Awireless memory comprising: an element forming region including atransistor having at least a channel forming region formed of onesemiconductor film among a plurality of semiconductor films separatedinto islands with thickness of 10 to 200 nm; an antenna; and anattaching agent, wherein the transistor is fixed on a flexiblesubstrate; and wherein a high functional integrated circuit includingthe element forming region is formed.
 18. A wireless memory comprising:an element forming region including a transistor having at least achannel forming region formed of one semiconductor film amongsemiconductor films separated into islands with thickness of 10 to 200nm; and a light detecting element or a light emitting element, whereinthe transistor is fixed on a flexible substrate; and wherein a highfunctional integrated circuit including the element forming region isformed.
 19. A wireless memory comprising: an element forming regionincluding a transistor having at least a channel forming region formedof one semiconductor film among semiconductor films separated intoislands with thickness of 10 to 200 nm; a light detecting element or alight emitting element; and an attaching agent, wherein the transistoris fixed on a flexible substrate; and wherein a high functionalintegrated circuit including the element forming region is formed. 20.The wireless memory according to claim 18 or 19, comprising an antenna.21. The wireless memory according to claim 16, 17, or 20, wherein apower can be supplied through electromagnetic waves through the antenna.22. The wireless memory according to any one of claims 16 to 21, whereinthe high functional integrated circuit includes an SRAM, a DRAM, or anonvolatile memory.
 23. The wireless memory according to any one ofclaims 16 to 21, wherein after the high functional integrated circuit isformed over a glass substrate, the high functional integrated circuit isfixed over the flexible substrate.
 24. A semiconductor devicecomprising: a driver for a wireless memory, including a PCI interface, acontrol circuit, and an electric wave interface; an arithmetic unit; anda memory unit.
 25. The semiconductor device according to claim 24,wherein the memory unit includes an SRAM, a DRAM, or a nonvolatilememory.
 26. The semiconductor device according to claim 24 or 25,comprising: a driver for transferring data with the wireless memory. 27.The semiconductor device according to any one of claims 24 to 26,comprising a plurality of the wireless memories.
 28. An informationprocessing system comprising: an element forming region including atransistor having at least a channel forming region formed of onesemiconductor film among a plurality of semiconductor films separatedinto islands with thickness of 10 to 200 nm; and an antenna, wherein thetransistor is fixed on a flexible substrate; and wherein a semiconductordevice and a wireless memory in which a high functional integratedcircuit including the element forming region is formed transmit andreceive data through the antenna.
 29. An information processing systemcomprising: an element forming region including a transistor having atleast a channel forming region formed of one semiconductor film among aplurality of semiconductor films separated into islands with thicknessof 10 to 200 nm; and a light detecting element or a light emittingelement, wherein the transistor is fixed on a flexible substrate; andwherein a semiconductor device and a wireless memory in which a highfunctional integrated circuit including the element forming region isformed transmit and receive data through the light detecting element orthe light emitting element.
 30. The information processing systemaccording to claim 29, wherein the wireless memory includes an antennaand transmits and receives data through the antenna.
 31. The informationprocessing system according to any one of claims 28 to 30, wherein thesemiconductor device includes a wireless memory driver and transmits andreceives data by using the wireless memory driver.
 32. The informationprocessing system according to any one of claims 28 to 31, wherein aplurality of the wireless memory is provided for the one semiconductordevice.
 33. The information processing system according to any one ofclaims 28 to 32, comprising a plurality of the wireless memories,wherein each of the plurality of memories stores an identificationnumber.